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SCIE journals
- One-Sample based Single-Valued Estimation of the Interface Profile from Intersubband Integrated Absorption Intensity Data
Dinh Nhu Thao, Nguyen Thanh Tien, Huynh Ngoc Toan, and Doan Nhat Quang
Journal of the Physical Society of Japan 85, 074603 (2016) - Key scattering mechanisms limiting the lateral transport in a modulation-doped polar heterojunction
Nguyen Thanh Tien, Dinh Nhu Thao, Pham Thi Bich Thao, and Doan Nhat Quang
JOURNAL OF APPLIED PHYSICS 119, 214304 (2016) - Electron distribution in polar heterojunctions within a realistic model
Nguyen Thanh Tien, Dinh Nhu Thao, Pham Thi Bich Thao, Doan Nhat Quang
Physica B 479, 62–66 (2015) - Single-valued estimation of the interface profile from intersubband absorption linewidth data
Doan Nhat Quang, Nguyen Nhu Dat, Nguyen Thanh Tien, Dinh Nhu Thao
Applied Physics Letters 100, 113103 (2012) - Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells
Doan Nhat Quang, Nguyen Huyen Tung, Nguyen Trung Hong, and Tran Thi Hai
Journal of the Physical Society of Japan 80, 044714 (2011) - Electron scattering from polarization charges bound on a rough interface of polar heterostructures
Doan Nhat Quang, Nguyen Huyen Tung, and Nguyen Thanh Tien
Journal of Applied Physics 109, 113711 (2011) - Electron scattering from roughness-induced fluctuations in the donor density in ZnO surface quantum wells
Doan Nhat Quang, Le Tuan and Nguyen Thanh Tien
Journal of Applied Physics 107, 123709 (2010) - Correlation-length dependence of lifetime ratios: Individual estimation of interface profile parameters
D. N. Quang, N. H. Tung, L. Tuan, N. T. Hong, and T. T. Hai
Appl. Phys. Lett. 94, 072106 (2009) - Key scattering mechanisms for holes in strained SiGe/Ge/SiGe square quantum wells
Doan Nhat Quang, Nguyen Huyen Tung, Do Thi Hien, and Tran Thi Hai
Journal of Applied Physics 104, 113711 (2008) - Electron mobility in Gaussian heavily doped ZnO surface quantum wells
D. N. Quang, L. Tuan, and N. T. Tien
Phys. Rev. B 77, 125326 (2008) - Band-bending effects on the electronic properties of square quantum wells
D. N. Quang, and N. H. Tung
Phys. Rev. B 77, 125335 (2008) - Theory of the channel-width dependence of the low-temperature hole mobility in Ge-rich narrow square Si/SiGe/Si quantum wells
D. N. Quang, N. H. Tung, D. T. Hien, and H. A. Huy
Phys. Rev. B 75, 073305 (2007) - Quantum and transport lifetimes due to roughness-induced scattering of a two-dimensional electron gas in Wurtzite group III-Nitride heterosctructures
D. N. Quang, N. H. Tung, V. N. Tuoc, N. V. Minh, H. A. Huy and D. T. Hien
Phys. Rev. B 74, 205312 (2006) - Roughness-Induced Mechanisms for Electron Scattering in Wurtzite Group-III Nitride Heterostructures
D. N. Quang, N. H. Tung, V. N. Tuoc, N. V. Minh and P. N. Phong
Phys. Rev. B 72, 245303 (2005) - Roughness-Induced Piezoelectric Charges in Wurtzite Group-III Nitride Heterostructures
D. N. Quang, N. H. Tung, V. N. Tuoc, N. V. Minh and P. N. Phong
Phys. Rev. B 72, 115337 (2005) - Low-Temperature Mobility of Holes in Si/SiGe p-Channel Heterostructures
D. N. Quang, V.N. Tuoc, T. D. Huan, & P. N. Phong
Phys. Rev. B 70, 1 (2004) - Strain Fluctuations in a Real [001]-Oriented Zinc-Blende-Sructure Surface Quantum Well
D. N. Quang, V. N. Tuoc and T. D. Huan
Physical Review B 68, 153306 (2003) - Density of States of a Two-Dimensional Electron Gas in a Perpendicular Magnetic Field and a Random Field of Arbitrary Correlation
S. Glutsch, F. Bechstedt, and D. N. Quang
J. Phys.: Cond. Matt. 15, 1305 (2003) - Roughness-Induced Piezoelectric Scattering in Lattice-Mismatched Semiconductor Quantum Wells
D. N. Quang, V. N. Tuoc, and T. D. Huan
Phys. Rev. B 68, 195316 (2003) - Random Piezoelectric Field in Real [001]-Oriented Strain-Relaxed Semiconductor
D. N. Quang, V. N. Tuoc , N. H. Tung, and T. D. Huan
Physical Review Letters 89, 077601 (2002) - Effect of impurity correlation in modulation-doped quantum wires
D. N. Quang, N. H. Tung, and T. D. Huan
Physical Review B 64, 125324 (2001) - Analytic Solution for the Density of States of the Disordered Electron Gas in a Quantum Wire
D. N. Quang, and N. H. Tung
Journal of the Physical Society of Japan 70, 449 (2001) - Effects of Surface Roughness and Alloy Disorder on the Density of States of the Disordered Electron Gas in Semiconductor Quantum Wires
D. N. Quang, and N. H. Tung
Physical Review B 62, 15337 (2000) - Semiclassical Approach to the Density of States of the Disordered Electron Gas in a Quantum Wire
D. N. Quang, and N. H. Tung
Physical Review B 60, 13648 (1999) - A Semiclassical Approach to the Electron Gas in Two-Dimensional Semiconductor Structures
D. N. Quang, and N. H. Tung
Physica Status Solidi B 207, 111 (1998) - Deep Tail in the Density of States of a Disordered Two-Dimensional Electron Gas
D. N. Quang, and N. H. Tung
Physica Status Solidi B 209, 375 (1998) - Auger Recombination in an Intense Acoustic Noise Field
D. N. Quang
Physica Status Solidi B 200, 199 (1997) - Effect of Impurity Correlation on the Density of States in Slightly Compensated Heavily Doped Semiconductors
D. N. Quang, N. N. Dat, and D. V. An
Journal of the Physical Society of Japan 66, 140 (1997) - On the electron mobility in slightly compensated heavily doped GaAs at low temperatures
D. N. Quang, N. N. Dat, D. Vanan
Physics Letters A 182, 125-129 (1993) - The role of impurity correlation in auger recombination in heavily doped semiconductors
D. N. Quang
J. Phys. Cond. Matt. 3, 5143-5152 (1991) - On the theory of auger recombination in slightly compensated heavily doped semiconductors
D. N. Quang
J. Phys. Soc. Japan 60, 3761-3767 (1991) - Auger recombination in heavily doped semiconductors
D. N. Quang
Phys. Stat. Sol. B 158, 669-683 (1990) - Auger Recombination In An Intense Piezoelectric Noise Field
D. N. Quang
J. Phys. Soc. Japan 59, 3276-3283 (1990) - On the theory of auger recombination in disordered semiconductors - a greens-function approach
D. N. Quang
Phys. Stat. Sol. B 154, 237-248 (1989) - ON THE THEORY OF RESONANCE RAMAN-SCATTERING IN HEAVILY DOPED DEGENERATE SEMICONDUCTORS
D. N. Quang, B. Esser, R. Keiper
Phys. Stat. Sol. B 107, 535-542 (1981) - ON THE THEORY OF RESONANCE RAMAN-SCATTERING IN SEMICONDUCTORS - A GREEN-FUNCTION APPROACH
D. N. Quang, B. Esser, R. Keiper
Phys. Stat. Sol. B 99, 103-114 (1980) - THEORY OF ELECTROREFLECTANCE OF HEAVILY DOPED DEGENERATE SEMICONDUCTORS
D. N. Quang
Phys. Stat. Sol. B 96, K73-K76 (1979) - THEORY OF THE COMPLEX DIELECTRIC FUNCTION OF A HEAVILY DOPED DEGENERATE SEMICONDUCTOR
D. N. Quang, B. Esser, R. Keiper
Phys. Stat. Sol. B 94, 115-123 (1979)
Non-SCIE journals
- Interface-roughness Parameters Determination from Mobility Ratio
Nguyen Huyen Tung and Doan Nhat Quang
Communications in Physics 19, 65 - 70 (2009) - Band-bending Effects from Double-side Selective Doping on The Electronic Properties of Square Quantum Wells
Tran Thi Hai, Nguyen Trung Hong,Nguyen Huyen Tung, and Doan Nhat Quang
Communications in Physics 19, 167 - 173 (2009) - Quantum Confinement in Gaussian Heavily-doped ZnO Surface Quantum Wells
N. T. Tien, L. Tuan, and D. N. Quang
Communications in Physics 18, 88-94 (2008) - Free-particle Model for Disorder Two Dimensional Elentron Gas in a Perpendicular Magnetic Field.
V. N. Tuoc, N. V. Minh and D. N. Quang
Comm. Phys. Suppl. 8-22 (2004)
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